SSD30P06-45D p-ch enhancement mode power mosfet 28a, -60v, r ds(on) 49m elektronische bauelemente 16-aug-2010 rev.a page 1 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed individually. a c d n o p g e f h k j m b to-252(d-pack) rohs compliant product a suffix of ?-c? specifies halogen free description these miniature surface mount mosfet s utilize high cell density process. low r ds(on) assures minimal power loss and conserves energy, making this device ideal for use in power management circuitry. typical applications are pwmdc-dc converters, power managem ent in portable and battery-powered products such as computers, printers , battery charger, telecommunication power system, and telephones power system. features ? low r ds(on) provides higher efficiency and extends battery life. ? miniature to-252 surface mount package saves board space. ? high power and current handling capability. ? extended v gs range (25) for battery pack applications. product summary product summary v ds (v) r ds (on) m( ? ? i d (a) -60 49@v gs = -10v 28 60@v gs = -4.5v 24 absolute maximum ratings (t a = 25 c unless otherwise specified) parameter symbol ratings unit drain-source voltage v ds -60 v gate-source voltage v gs 20 v continuous drain current a i d @t a =25 61 a pulsed drain current b i dm 40 a continuous source current (diode conduction) a i s -30 a total power dissipation a p d @t a =25 50 w operating junction and storage temperature range t j , t stg -55 ~ 175 c thermal resistance ratings maximum thermal resistance junction-ambient a r ja 50 c / w maximum thermal resist ance junction-case r jc 3.0 c / w notes a. surface mounted on 1? x 1? fr4 board. b. pulse width limited by maximum junction temperature. ref. millimete r ref. millimete r min. max. min. max. a 6.4 6.8 j 2.30 ref. b 5.20 5.50 k 0.70 0.90 c 2.20 2.40 m 0.50 1.1 d 0.45 0.58 n 0.9 1.6 e 6.8 7.3 o 0 0.15 f 2.40 3.0 p 0.43 0.58 g 5.40 6.2 h 0.8 1.20 ? ? gate ? ? source ? ? drain
SSD30P06-45D p-ch enhancement mode power mosfet 28a, -60v, r ds(on) 49m elektronische bauelemente 16-aug-2010 rev.a page 2 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed individually. electrical characteristics (t a = 25 c unless otherwise specified) parameter symbo min. typ. max. unit test conditions static gate-threshold voltage v gs(th) -1 - - v ds = v gs, i d = -250 a gate-body leakage i gss - - 100 na v ds = 0v, v gs = 20v zero gate voltage drain current i dss - - -1 a v ds = -48v, v gs = 0v - - -10 v ds = -48v, v gs =0v, t j =55c on-state drain current a i d(on) -20 - - a v ds = -5v, v gs = -10v drain-source on-resistance a r ds(on) - - 49 m ? v gs = -10v, i d = -28a - - 60 v gs = -4.5v, i d = -24a forward transconductance a g fs - 8 - s v ds = -15v, i d = -28a diode forward voltage v sd - - -1.2 v i s = -2.5 a, v gs = 0 v dynamic b total gate charge q g - 18 - nc v ds = -30 v v gs = -4.5 v i d = -28 a gate-source charge q gs - 5 - gate-drain charge q gd - 2 - turn-on delay time t d(on) - 8 - ns v dd = -30 v i d = -1 a v gen = -10 v r l = 30 ? r g = 6 ? rise time t r - 10 - turn-off delay time t d(off) - 35 - fall time t f - 12 - notes a. pulse test pulse width Q 300 s, duty cycle Q 2 . b. guaranteed by design, not s ubject to production testing.
SSD30P06-45D p-ch enhancement mode power mosfet 28a, -60v, r ds(on) 49m elektronische bauelemente 16-aug-2010 rev.a page 3 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed individually. characteristic curve s c i t s i r e t c a r a h c r e f s n a r t s c i t s i r e t c a r a h c t u p t u o on-resistance vs. junction temperature gate charge capacitance on-resistance vs. drain current 0 3 6 9 12 15 012345 v ds - drain-to-source voltage (v) i d - drain current (a) -4.5v v gs = -10v 0 3 6 9 12 15 12345 v gs - gate-to-source voltage (v) i d - drain current (a) t a = -55 o c 25 o c 125 o c 0.8 1 1.2 1.4 1.6 1.8 0246810 i d - drain current (a) r ds(on) - normalized on-resistance -10v -4.5v -10 -8 -6 -4 -2 0 0 6 12 18 24 30 36 qg, charge (nc) vgs voltage ( v ) 0 400 800 1200 1600 2000 2400 0 5 10 15 20 25 30 v ds - drain-to-source voltage (v) c - capacitance (pf) ciss coss crss 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 -50 -25 0 25 50 75 100 125 150 175 on-resistance vs. junction temperature r ds(on) - on-resistance normalized v gs = -10v
SSD30P06-45D p-ch enhancement mode power mosfet 28a, -60v, r ds(on) 49m elektronische bauelemente 16-aug-2010 rev.a page 4 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed individually. characteristic curve normalized thermal transient impedance, junction-to-ambient single pulse power threshold voltage n o e g a t l o v d r a w r o f e d o i d n i a r d - e c r u o s -resistance vs.gate-to source voltage 0 10 20 30 40 50 0.0 01 0.01 0.1 1 10 100 100 0 time (sec) 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 square wave pulse duration (sec) normalized effective transient thermal impedance r ja (t) = r(t) + r ja r ja = 125 o c/w t j - t a = p * r ja (t) duty cycle, d = t 1 / t 2 p(pk) t 1 t 2 single puls e 0.01 0.02 0.05 0.1 0.2 d = 0.5 0.001 0.01 0.1 1 10 100 0 0.2 0.4 0.6 0.8 1 1.2 1.4 v sd - source-to-drain voltage (v) i s - source current (a) t a = 125 o c 25 o c 0 0.1 0.2 0.3 0.4 246810 v gs - gate-to-source voltage (v) r ds(on) - on-resistance (ohm) 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 1.9 -50 -25 0 25 50 75 100 125 150 t j - temperature ( o c) v gs(th), variance (v) i d = -250 a
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